Method of making flash EEPROM cell

Details Method of making flash EEPROM cell Method of making flash EEPROM cell

1995-12-20

1997-03-18

Niebling, John

Fishing, trapping, and vermin destroying

437 45, H01L 218247

Patent

active

056122373

ABSTRACT:
A flash EEPROM cell according to the present invention is manufactured in accordance with the following processes: forming a oxide film on a portion of the silicon substrate by means of the LOCOS process using the patterned nitride film as an oxidation preventing layer; dry-etching a portion of the oxide film using the patterned nitride film as the etching mask; forming a tunnel oxide film, forming floating gates of a symmetric structure at the etched face; removing the patterned nitride film; forming source and drain regions by means of the self-aligned ion implantation method using the residual oxide film remaining below the patterned nitride film and the floating gates; removing the residual oxide film; forming a select channel region at this portion by means of the ion implantation process for controlling a threshold voltage; and then forming an interpoly oxide film and a control gate by means of the common processes.

REFERENCES:
patent: 5173436 (1992-12-01), Gill et al.
patent: 5422504 (1995-06-01), Chang et al.
patent: 5427968 (1995-06-01), Hong
patent: 5510288 (1996-04-01), Hong
patent: 5556799 (1996-09-01), Hong

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