Method of making field-plate isolated CMOS devices

Details Method of making field-plate isolated CMOS devices Method of making field-plate isolated CMOS devices

1984-07-02

1985-12-31

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, 148187, 148DIG82, 357 91, H01L 21263, H01L 2978, H01L 2704

Patent

active

045611700

ABSTRACT:
A dynamic read/write memory or the like is made by a twin-well CMOS process that employs field-plate isolation rather than thick field oxide, with no separate channel stop implant. The field plate is grounded over P well areas, and connected to the positive supply over the N wells. One-transistor memory cells are of metal-gate construction with N+ drain regions buried beneath oxide, and other transistors are constructed with silicided, implanted, source/drain regions, self-aligned to the metal gates, employing sidewall oxide spacers to provide lightly-doped drains.

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