Method of making field effect transistors with opposed source _a

Details Method of making field effect transistors with opposed source _a Method of making field effect transistors with opposed source _a

1983-09-12

1985-04-02

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148175, 148187, 357 22, 357 91, H01L 2980, H01L 21283

Patent

active

045078459

ABSTRACT:
A field-effect transistor in which the gate and source are positioned on opposite faces of a substrate, and a method for its fabrication. In the method, a stop-etch buffer layer and an active semiconductor layer are successively formed by molecular beam epitaxy on a first face of a substrate of semi-insulating material, such as gallium arsenide. A source via hole is etched from the opposite face of the substrate, using a first etchant that does not react with the buffer layer, and extended through the buffer layer with a second etchant that does not react with the active layer. After metalization of the source via hole, electron beam lithography techniques are used to determine its location as viewed from the first face of the substrate. Then a mesa area is formed from the active layer, and drain and gate areas are defined in precise relation to the source via hole, and are metalized.

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