Method of making field effect transistor

Details Method of making field effect transistor Method of making field effect transistor

1994-10-14

1995-11-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437176, 437197, 437203, 437912, H01L 21265, H01L 2144, H01L 2148

Patent

active

054707676

ABSTRACT:
A semiconductor device having a gate electrode having a leg with two mutually offset portions is formed by successively depositing on a semiconductor substrate an amorphous material and a crystalline metal layer. A portion of the crystalline metal layer is removed photolithographically and the amorphous material is etched to form a hole extending to the semiconductor substrate. The through hole is filled when a second amorphous material is deposited on the crystalline metal layer. A second hole is photolithographically prepared in the second amorphous material, partially aligned with the first hole and filled with a gate electrode material, and thereafter the second amorphous material, crystalline metal layer, and original amorphous material are removed, leaving a gate electrode having a leg with mutually offset portions.

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Pospieszakski et al., "Noise Parameters And Light Sensitivity Of Low-Noise High-Electron-Mobility Transistors At 300 And 12.5 K", IEEE Transactions on Electron Devices, vol. ED-33, No. 2, Feb. 1986, pp. 218-223.

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