Method of making field effect compound semiconductor device with

Details Method of making field effect compound semiconductor device with Method of making field effect compound semiconductor device with

1994-10-28

1995-08-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 39, 437126, 437133, 437175, 437176, 437184, 437187, 437229, 437912, 437944, 148DIG100, H01L 21265, H01L 2128

Patent

active

054459796

ABSTRACT:
A semiconductor device comprises an active layer formed of a compound semiconductor for allowing carriers travel therethrough for exhibiting a function of the device, a protection layer including a non-doped compound semiconductor layer formed on the active layer, a pair of contact holes formed in the protection layer to expose the active layer, and an electrode filling the contact holes and covering the exposed active layer and extending on the protection layer. Generation of notch can be prevented even upon formation of a contact hole in the non-doped compound semiconductor layer and depositing electrode layer thereon.

REFERENCES:
patent: 5116772 (1992-05-01), Park et al.
patent: 5139968 (1992-08-01), Hayase et al.
patent: 5288660 (1994-02-01), Hua et al.
patent: 5385851 (1995-01-01), Misawa et al.
"IBM Technical Disclosure Bulletin" vol. 29, No. 11, Apr. 1987.

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