Metal treatment – Compositions – Heat treating
Patent
1984-03-13
1986-07-29
Roy, Upendra
Metal treatment
Compositions
Heat treating
29571, 29576B, 148187, 148DIG84, 357 91, H01L 21265, H01L 2120
Patent
active
046029656
ABSTRACT:
A method of preparing an active surface layer on a semi-insulating GaAs substrate comprising the steps of ion implanting a surface layer with silicon to form an n-type active layer and ion implanting a buried diffusion layer beneath the active layer with boron to prevent defects in the substrate from influencing the active region. The method is particularly useful for GaAs MESFETs.
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Communications Satellite Corporation
Roy Upendra
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