Fishing – trapping – and vermin destroying
Patent
1985-10-31
1991-06-18
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 49, 437 52, H01L 2190, H01L 2995
Patent
active
050249649
ABSTRACT:
A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferroelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 25,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.
REFERENCES:
patent: 3405440 (1968-10-01), Nolta
patent: 3483477 (1969-12-01), Nolta
patent: 3571915 (1971-03-01), Shirland
patent: 3728674 (1973-04-01), Rohrer
patent: 3874922 (1975-04-01), Mickelsen
patent: 3939292 (1976-02-01), Rohrer
patent: 3986478 (1976-10-01), Galvin
patent: 3996551 (1976-12-01), Croson
patent: 4013489 (1977-03-01), Oldham
patent: 4149301 (1979-04-01), Cook
patent: 4149302 (1979-04-01), Cook
patent: 4195355 (1980-03-01), Rohrer
Pulvari "A New Graded Electrode for Forming Intimate Contact with Ferroelectrics", IEEE Trans. on Elect. Dev. ED 16 pp. 532-535 (Jun. 1969).
McMillin Larry D.
Rohrer George A.
Chaudhuri Olik
Manzo Edward D.
Ramtron Corporation
Weiner Irving M.
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