Method of making fault-free surface zone in semiconductor device

Details Method of making fault-free surface zone in semiconductor device Method of making fault-free surface zone in semiconductor device

1980-12-05

1983-03-15

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 91, 427 82, 427 91, H01L 21322, H01L 752, H01L 21263

Patent

active

043766579

ABSTRACT:
In a gettering method for processing semiconductor wafers a semiconductor wafer such as a silicon wafer is first annealed in a non-oxidizing atmosphere, for example, in a nitrogen atmosphere, at a temperature in the range of 950.degree. to 1,300.degree. C., preferably at 1,050.degree. C., for more than 10 minutes, for example for four (4) hours, to diffuse out oxygen near the surfaces of the semiconductor wafer. Then the semiconductor wafer is annealed at a temperature in the range of 600.degree. to 800.degree. C., for example at 650.degree. C., for more than one hour, preferably for 16 hours, to create in the interior of the semiconductor wafer microdefects of high density.

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