Method of making epitaxial wafers

Details Method of making epitaxial wafers Method of making epitaxial wafers

1994-03-04

1994-11-08

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437130, 117 54, 117 60, 117915, H01L 21302

Patent

active

053626834

ABSTRACT:
To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures on both sides of a GaAs substrate wafer with the crystal plane orientation of {100}. The epitaxial wafer is then divided in the GaAs substrate wafer portion into two pieces to obtain two epitaxial wafers. To perform the epitaxial growth process, a plurality of GaAs substrate wafers are held at their edges and then the GaAs substrate wafers are placed in a Ga solution at prescribed spatial intervals. To divide the epitaxial wafer in the GaAs substrate portion into two pieces, the substrate wafer portion is cut parallel to the main surface. Or, the GaAs substrate wafer can also be removed by means of etching while the epitaxial wafer is rotated at a high speed in the etching solution.

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patent: 5073517 (1991-12-01), Iwabuchi et al.
patent: 5240882 (1993-08-01), Satoh et al.

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