Fishing – trapping – and vermin destroying
Patent
1993-03-31
1996-01-30
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437203, 148DIG10, 148DIG11, 257565, 257587, H01L 21265
Patent
active
054880033
ABSTRACT:
A new method of isolating a polysilicon emitter from the base region of a bipolar transistor, trenching the polysilicon emitter into the semiconductor substrate, and maintaining a consistent base width of a bipolar transistor independent of variations in emitter mask thicknesses is disclosed. The polysilicon emitter isolation provides for better electrical breakdown characteristics between the emitter and the base by protecting the dielectric layer between the polysilicon emitter and base regions from defects and contamination associated with the BiCMOS manufacturing environment. The polysilicon emitter is trenched into the semiconductor substrate in order to reduce transistor operation problems associated with hot electron injection. Consistent base widths improve transistor performance uniformity thereby improving manufacturability and reliability.
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Brown Brian J.
Chambers Stephen
Chau Robert
Chern Chan-Hong
Yau Leopoldo D.
Chaudhuri Olik
Intel Corporation
Pham Long
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