Method of making electrical contacts having a low optical absorp

Details Method of making electrical contacts having a low optical absorp Method of making electrical contacts having a low optical absorp

1975-02-12

1976-08-17

Weiffenbach, Cameron K.

Coating processes

Electrical product produced

Condenser or capacitor

357 65, 427 88, 427 91, 427383, B05D 512

Patent

active

039755550

ABSTRACT:
An electrical contact having low electrical resistance and low optical absorption is fabricated on a semiconductor electroluminescent article of III-V semiconductor material having a P-type region and an N-type region contiguous to each other, with a P-N junction therebetween. In the method of forming the contact, Zn is diffused into a surface of the P-type region opposite the PN junction. Then, a layer of gold is evaporated onto the Zn diffused surface while the device is at a temperature of approximately 400.degree.C.

REFERENCES:
patent: 3343026 (1967-09-01), Luechinger et al.
patent: 3634872 (1972-01-01), Umeda
patent: 3705059 (1972-12-01), Kun
patent: 3733561 (1973-05-01), Hayashi
patent: 3850688 (1974-11-01), Halt
Hayashi et al. GaAS-Al.sub.x Ga.sub.1.sub.- As Double Heterostructure Injection Lasers In J. of App. Physics 42 (5): pp. 1929-1940 Apr. 1971.

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