Method of making electrical contacts

Details Method of making electrical contacts Method of making electrical contacts

1986-12-11

1988-02-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437178, 357 67, 357 22, H01L 21283

Patent

active

047242230

ABSTRACT:
Electrical contacts are made to conductive elements of an array which are embedded in a matrix of silicon with the conductive elements exposed at a surface. The surface is covered with silicon oxide, and an opening is made in the silicon oxide to expose a portion of the matrix and a portion of each of several conductive elements. A silicide-forming metal, for example cobalt, is deposited, the assemblage is heated to cause the cobalt to react with the exposed silicon to form conductive cobalt disilicide. The cobalt disilicide is in ohmic contact with each of the conductive elements at the interfaces therewith and is in rectifying contact with the silicon of the matrix at the interface therewith. Unreacted cobalt overlying the silicon oxide is removed.

REFERENCES:
patent: 3889359 (1975-06-01), Rand
patent: 4463366 (1984-07-01), Ishii et al.
patent: 4482907 (1984-11-01), Jay
M. Tabasky et al., Materials Research Society Symposium Proceedings, vol. 52, eds. T. O. Sedgwick et al., pp. 271-277, 1985.
B. M. Ditchek, J. Appl. Phys., 57(6), Mar. 15, 1985, pp. 1961-1967, "Preparation and Electrical Properties of a Directionally Solidified . . . ".
B. M. Ditchek, Journal of Crystal Growth, 75 (1986), pp. 264-268, "Bridgman and Czochralski Growth . . . ".
S. P. Murarka, J. Vac. Sci. Technol., vol. 17, No. 4, Jul./Aug., 1980, pp. 775-792, "Refractory Silicides for . . . ".

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