Method of making dynamic random access memory cell having a SDHT

Details Method of making dynamic random access memory cell having a SDHT Method of making dynamic random access memory cell having a SDHT

1991-01-16

1993-01-26

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437160, 437164, 437228, 437919, H01L 2170

Patent

active

051822245

ABSTRACT:
A SDHT structured DRAM Cell with a P type silicon substrate and a P well region with a first trench formed into the P well region and a CVD oxide film layer formed on the wall of the first trench is disclosed. A second trench is formed in the bottom of the first trench. A capacitive oxide film layer is formed on the CVD oxide film layer of the first trench and on the second trench with a conducting material filling the trenches to form an inside charge storage electrode. A N MOSFET is formed on the P well region near the first trench with the N MOSFET having a soure N+ region and a drain N+ region, each including a LDD region.

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