Method of making dynamic memory array

Details Method of making dynamic memory array Method of making dynamic memory array

1984-08-07

1986-09-02

Fears, Terrell W.

Metal working

Method of mechanical manufacture

Assembling or joining

365149, 29577C, H01L 2704, H01L 2978

Patent

active

046087516

ABSTRACT:
A dynamic read/write memory cell of the one transistor type is made by a single-level polysilicon process in which the word lines and the gates of the access transistors are formed by the metal strips. No metal-to-silicon or metal-to-polysilicon contacts are needed. The access transistors are made by etching through polysilicon strips which are the capacitor bias plates. The size of the transistor is not determined by alignment accuracy.

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patent: 4295264 (1981-10-01), Rogers
IBM Tech. Dis. Bul., vol. 19, No. 2, Jul. 1976, pp. 458-459, "One-Device Storage Cell with Implanted Storage Node".
IBM Tech. Dis. Bul., vol. 14, No. 11, Apr. 1972, pp. 3359-3360, "One Device Memory Cell with Step Oxide Structure".
IBM Tech. Dis. Bul., vol. 18, No. 10, Mar. 1976, p. 3288, "Memory Cell Structure".

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