Method of making double grid substrate plate DRAM cell array

Details Method of making double grid substrate plate DRAM cell array Method of making double grid substrate plate DRAM cell array

1994-09-30

1996-05-28

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 64, 437203, H01L 218242

Patent

active

055211151

ABSTRACT:
A high density substrate plate trench DRAM cell memory device and process are described in which a buried region is formed adjacent to deep trench capacitors such that the substrate region of DRAM transfer FETs can be electrically isolated from other FETs on a semiconductor substrate. The buried region is contacted along its perimeter by a reach through region to complete the isolation. The combined regions reduce charge loss due to better control of device parasitics.

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