Method of making doped semiconductor film having uniform impurit

Details Method of making doped semiconductor film having uniform impurit Method of making doped semiconductor film having uniform impurit

1991-06-24

1993-10-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437233, 437967, 437971, 437165, H01L 2120

Patent

active

052504638

ABSTRACT:
For providing a doped semiconductor film having uniform thickness and a uniform impurity concentration on a semiconductor substrate, both a raw gas such as silane and an impurity gas such as phosphine are prepared. Thereafter, the raw gas is introduced into a reaction chamber, while a decomposed impurity gas, that is obtained by means for decomposing the impurity gas, is introduced into the reaction chamber, thereby depositing a doped semiconductor film such as a polysilicon film on the semiconductor substrate. A sub-reaction chamber, a plasma discharge device and a light source are used as the means for decomposing the impurity gas.

REFERENCES:
patent: 4927786 (1990-05-01), Nishida
patent: 5198387 (1993-03-01), Tang
Duchemin et al.; "Kinetics of silicon growth under low hydrogen pressure", J. Electrochem Soc.; vol. 125, No. 4, 1978; pp. 637-644.

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