Method of making doped semiconductor film having uniform impurit

Details Method of making doped semiconductor film having uniform impurit Method of making doped semiconductor film having uniform impurit

1995-06-06

1997-12-30

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118723E, 118725, 118715, C23C 1600

Patent

active

057025290

ABSTRACT:
For providing a doped semiconductor film having a uniform thickness and a uniform impurity concentration on a semiconductor substrate, both a raw gas such as silane and an impurity gas such as phosphine are prepared. Thereafter, the raw gas is introduced into a reaction chamber, while a decomposed impurity gas, that is obtained by means for decomposing the impurity gas, is introduced into the reaction chamber, thereby depositing a doped semiconductor film such as a polysilicon film on the semiconductor substrate. A sub-reaction chamber, a plasma discharge device and a light source are used as the means for decomposing the impurity gas.

REFERENCES:
patent: 4348428 (1982-09-01), Rockley
patent: 4927786 (1990-05-01), Nishida
patent: 5198387 (1993-03-01), Tang
Duchemin et al., "Kinetics of Silicon Growth Under Low Hydrogen Pressure," J. Electrochem Soc., vol. 125, No. 4, 1978, pp. 637-644.
Nishida, J. Appl. Phys. 58(4), 15 Aug. 1985 pp. 1427-1431.
Kuwano, 15th IEEE Photovoltaic Specialists Conf. Kissimmee Fl., May 12-15 1981, published Aug. 1981.

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