Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-11-28
2006-11-28
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
27
Reexamination Certificate
active
07141863
ABSTRACT:
A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.
REFERENCES:
patent: 4611091 (1986-09-01), Choudary et al.
patent: 4612411 (1986-09-01), Wieting et al.
patent: 4798660 (1989-01-01), Ermer et al.
patent: 4915745 (1990-04-01), Pollock et al.
patent: 5078804 (1992-01-01), Chen et al.
patent: 5393675 (1995-02-01), Compaan
patent: 5436204 (1995-07-01), Albin et al.
patent: 5474939 (1995-12-01), Pollock et al.
patent: 5714010 (1998-02-01), Matsuyama et al.
patent: 5909632 (1999-06-01), Gessert
patent: 6040521 (2000-03-01), Kushiya et al.
patent: 6852614 (2005-02-01), Compaan et al.
patent: 2003/0180983 (2003-09-01), Oswald et al.
A.N. Tiwari, A. Romeo, D. Baetzner and H. Zogg; Progress in Photovoltaics: Research and Applications; Prog. Photovolt: Res. Appl. 2001; 9:211-215; entitled: “Flexible CdTe Solar Cells on Polymer Films”.
G. Gordillo, M. Grizalez, L.C. Moreno and F. Landazabal; Phys. Stat. Sol. (b) 220, 215 (2000) entitled: “Influence of the Optical Window on the Performance of TCO/CdS/CdTe Solar Cells”.
L. C. Moreno et al.; Phys. Stat. Sol. (b) 220, 289 (2000); entitled: “pH Effect on the Deposition of CdS on ZnO and SnO2:F Substrates by CBD Method”.
Alvin D. Compaan et al.; Annual Technical Report for the Period Mar., 1998 to Mar., 1999; Contract No. ZAF-8-17619-14; Dept. of Physics and Astronomy,The University of Toledo; entitled: “High Efficiency Thin Film CdTe and a-Si Based Solar Cells”.
A. Romeo et al.; 2ndWorld Conference and Exhibition on Photovoltaic Solar Energy Conversion, Jul., 1998; entitled: “Influence of Transparent Conducting Oxides on the Properties of CdTe/CdS”.
J. Han et al.; 1993 American Institute of Physics; pp. 840-842; Appl. Phys. Letter. 62 (8); Feb. 22, 1993; entitled: “Heavy p-doping of ZaTe by Molecular Beam Epitaxy using a Nitrogen Plasma Source”.
Compaan Alvin D.
Gupta Akhlesh
MacMillan Sobanski & Todd LLC
Pham Long
University of Toledo
LandOfFree
Method of making diode structures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making diode structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making diode structures will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3638935