Method of making diode structures

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Reexamination Certificate

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07141863

ABSTRACT:
A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.

REFERENCES:
patent: 4611091 (1986-09-01), Choudary et al.
patent: 4612411 (1986-09-01), Wieting et al.
patent: 4798660 (1989-01-01), Ermer et al.
patent: 4915745 (1990-04-01), Pollock et al.
patent: 5078804 (1992-01-01), Chen et al.
patent: 5393675 (1995-02-01), Compaan
patent: 5436204 (1995-07-01), Albin et al.
patent: 5474939 (1995-12-01), Pollock et al.
patent: 5714010 (1998-02-01), Matsuyama et al.
patent: 5909632 (1999-06-01), Gessert
patent: 6040521 (2000-03-01), Kushiya et al.
patent: 6852614 (2005-02-01), Compaan et al.
patent: 2003/0180983 (2003-09-01), Oswald et al.
A.N. Tiwari, A. Romeo, D. Baetzner and H. Zogg; Progress in Photovoltaics: Research and Applications; Prog. Photovolt: Res. Appl. 2001; 9:211-215; entitled: “Flexible CdTe Solar Cells on Polymer Films”.
G. Gordillo, M. Grizalez, L.C. Moreno and F. Landazabal; Phys. Stat. Sol. (b) 220, 215 (2000) entitled: “Influence of the Optical Window on the Performance of TCO/CdS/CdTe Solar Cells”.
L. C. Moreno et al.; Phys. Stat. Sol. (b) 220, 289 (2000); entitled: “pH Effect on the Deposition of CdS on ZnO and SnO2:F Substrates by CBD Method”.
Alvin D. Compaan et al.; Annual Technical Report for the Period Mar., 1998 to Mar., 1999; Contract No. ZAF-8-17619-14; Dept. of Physics and Astronomy,The University of Toledo; entitled: “High Efficiency Thin Film CdTe and a-Si Based Solar Cells”.
A. Romeo et al.; 2ndWorld Conference and Exhibition on Photovoltaic Solar Energy Conversion, Jul., 1998; entitled: “Influence of Transparent Conducting Oxides on the Properties of CdTe/CdS”.
J. Han et al.; 1993 American Institute of Physics; pp. 840-842; Appl. Phys. Letter. 62 (8); Feb. 22, 1993; entitled: “Heavy p-doping of ZaTe by Molecular Beam Epitaxy using a Nitrogen Plasma Source”.

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