Method of making dielectrically isolated integrated circuits usi

Details Method of making dielectrically isolated integrated circuits usi Method of making dielectrically isolated integrated circuits usi

1989-07-06

1990-05-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 26, 437 62, 437 89, H01L 2120, H01L 21265, H01L 2176

Patent

active

049295667

ABSTRACT:
A method includes forming an oxide layer on the substrate of a first thickness and patterning the insulative layer to form the laterally dielectric walls in exposed island areas of the substrate. The islands are epitaxially grown on the exposed surface of the substrate to a second thickness to form the laterally dielectrically isolated islands. For totally dielectrically isolated islands, the second thickness is less than the first thickness and a horizontal dielectric isolation is formed in the epitaxial layer by ion implanting oxygen. This is followed by increasing the island thickness to the first thickness by further epitaxial growth.

REFERENCES:
patent: 4255207 (1981-03-01), Nicolay et al.
patent: 4412868 (1983-11-01), Brown et al.
patent: 4566914 (1986-01-01), Hall
patent: 4612701 (1986-09-01), Cox

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