Method of making diamond N-type semiconductor diamond p-n juncti

Details Method of making diamond N-type semiconductor diamond p-n juncti Method of making diamond N-type semiconductor diamond p-n juncti

1990-11-07

1992-05-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437233, 437904, 437967, 427 69, 427 70, 4272481, 4272551, 148DIG122, 25218212, 25218313, 252502, 252950, 252951, H01L 2100, H01L 2102, H01L 21205, H01L 2972

Patent

active

051127750

ABSTRACT:
A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.

REFERENCES:
patent: 3852086 (1974-12-01), Murata et al.
patent: 4394400 (1983-07-01), Green et al.
patent: 4740263 (1988-04-01), Imai et al.
patent: 4791005 (1988-12-01), Becker et al.
patent: 4844785 (1989-07-01), Kitabatake et al.
patent: 4925701 (1990-05-01), Jansen et al.
patent: 4951101 (1990-08-01), Alter et al.
patent: 4981818 (1991-01-01), Anthony et al.
patent: 5001452 (1991-03-01), Imai et al.
patent: 5008737 (1991-04-01), Burnham et al.
patent: 5024867 (1991-06-01), Iwabuchi
Kawarada, M., Diamond Film, CA114(12):112356z, 1990.
Okano, Ken, Fabricaiton of a diamond p-n junction diode using the chemical vapor technique, Solid State Electronics, 34(2), pp. 139-141, 1991.
Iida, M., Fabrication of diamond p-n junction diode by hot filament CVD Method, Katai Butsusi, 25(8), pp. 503-510, 1990.
Haku, H., Manufacture of diamond thin film by plasma chemical vapor deposition, CA111(16):144564v, 1989.
Kobayashi, K., Deposition of hard carbon films by the r.f. glow discharge Method, Thin Solid Films, 158(2), pp. 233-238, 1988.
Has, Z., RF-plasma deposition of thin diamond-like carbon film, Proc. Int. Ion Eng. Congr., vol. 2, pp. 1143-1148, 1983.
Okano, K., Synthesis of n-type semiconducting diamond film using diphosphorus pentoxide as the doping source, Appl. Phys. A, A51(4), pp. 344-346, 1990.
Kurihara, K., Diamond-film synthesis using DC plasma jet CVD, Fujitsu Sci. Tech. J. (Japan), vol. 25, no. 1, pp. 44-51, 1989.

Affiliated with

Also associated with

Rating

Method of making diamond N-type semiconductor diamond p-n juncti does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making diamond N-type semiconductor diamond p-n juncti, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making diamond N-type semiconductor diamond p-n juncti will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2426103