Method of making CVD Si.sub.3 N.sub.4

Details Method of making CVD Si.sub.3 N.sub.4 Method of making CVD Si.sub.3 N.sub.4

1993-02-05

1994-03-29

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272551, 4272481, 427314, C23C 1600

Patent

active

052982874

ABSTRACT:
CVD Si.sub.3 N.sub.4 can be made by placing a substrate (2) inside a CVD reactor (4) having an interior and interior walls (6). The interior walls of the reactor are include a high temperature metal selected from the group consisting of Mo, Nb, Rh, Hf, Ta, W, Re, and Ir. An inert gas is flowed through the reactor (4) and the pressure inside the reactor is reduced to less than about 40 kPa. The substrate (2) and interior of the reactor (4) are heated to a temperature between about 1200.degree. C. and about 1700.degree. C. A reactant gas mixture of a silicon halide and an excess of a nitrogen-containing compound is flowed into the reactor such that the silicon halide reacts with the nitrogen-containing compound to form Si.sub.3 N.sub.4. The high temperature metal on the interior walls (6) of the reactor (4) inhibits the formation of Si.sub.3 N.sub.4 on the interior walls of the reactor so the majority of the Si.sub.3 N.sub.4 forms on the substrate (2).

REFERENCES:
patent: 3226194 (1965-12-01), Kuntz
patent: 4214037 (1980-07-01), Galasso et al.
patent: 4289801 (1981-09-01), Galasso et al.
patent: 4472476 (1984-09-01), Veltri et al.
patent: 4500483 (1985-02-01), Veltri et al.
patent: 4610896 (1986-09-01), Veltri et al.
patent: 4617997 (1987-06-01), Galasso et al.
patent: 4981102 (1991-01-01), Gautreaux et al.

Affiliated with

Also associated with

Rating

Method of making CVD Si.sub.3 N.sub.4 does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making CVD Si.sub.3 N.sub.4, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making CVD Si.sub.3 N.sub.4 will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-790134