Method of making contacted body silicon-on-insulator field effec

Details Method of making contacted body silicon-on-insulator field effec Method of making contacted body silicon-on-insulator field effec

1995-10-13

1997-09-23

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 41, 437 62, 437984, 148DIG150, H01L 2184

Patent

active

056703880

ABSTRACT:
Structures and methods are presented for forming a body-substrate connector for an SOI FET. The connector is formed substantially co-aligned with the gate conductor on a side of the device that does not interfere with source and drain. The body is thus held close to the substrate potential and the connector provides a path for majority carriers to quickly leave the body. By contacting the body of the SOI MOSFET device in a manner that does not perturb the charge imaged by the gate, parasitic bipolar effects are eliminated while maintaining the desirable attributes of SOI MOSFET devices, such as low substrate bias sensitivity and steep sub-threshold slope. By forming the connector substantially co-aligned with the gate conductor the connection uses little or no surface area.

REFERENCES:
patent: 4396933 (1983-08-01), Magdo et al.
patent: 4554570 (1985-11-01), Jastrzebski et al.
patent: 4814287 (1989-03-01), Takemoto et al.
patent: 4946799 (1990-08-01), Blake et al.
patent: 5055898 (1991-10-01), Beilstein, Jr. et al.
patent: 5298773 (1994-03-01), Woodruff
patent: 5317181 (1994-05-01), Tyson
patent: 5326991 (1994-07-01), Takasu
patent: 5405795 (1995-04-01), Beyer et al.
patent: 5591650 (1997-01-01), Hsu et al.

Affiliated with

Also associated with

Rating

Method of making contacted body silicon-on-insulator field effec does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making contacted body silicon-on-insulator field effec, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making contacted body silicon-on-insulator field effec will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1938414