Method of making contact electrodes of polysilicon in semiconduc

Details Method of making contact electrodes of polysilicon in semiconduc Method of making contact electrodes of polysilicon in semiconduc

1991-10-11

1993-09-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437191, 437162, 437 57, H01L 2144

Patent

active

052448355

ABSTRACT:
For providing different conductivity type contact electrodes being in contact with different conductivity type semiconductor regions formed in a semiconductor substrate, after an insulating film is formed on the semiconductor substrate, it is selectively etched down to one conductivity type semiconductor region to provide a first contact hole therein. One conductivity type doped polysilicon layer is deposited over the substrate surface to fill the first contact hole therewith. Thereafter, the one conductivity type doped polysilicon layer and the insulating film are selectively removed down to an opposite conductivity type semiconductor region to provide a second contact hole therein. An opposite conductivity type doped polysilicon layer is deposited over the substrate surface to fill the second contact hole therewith. These polysilicon layers are then removed from the surface of the insulating film to provide first and second contact electrodes in the contact holes.

REFERENCES:
patent: 4184909 (1980-01-01), Chang et al.
patent: 4714686 (1987-12-01), Sander et al.
patent: 4782030 (1988-11-01), Katsumata et al.
patent: 5102827 (1992-04-01), Chen et al.
patent: 5114867 (1992-05-01), Custode
patent: 5114874 (1992-05-01), Custode

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