Method of making compound semiconductor photodetector

Details Method of making compound semiconductor photodetector Method of making compound semiconductor photodetector

1996-01-23

1999-06-08

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 93, 438 57, H01L 3118

Patent

active

059100141

ABSTRACT:
InGaAs photodiodes are produced on an epitaxial InP wafer having an InP substrate, epitaxially grown layers and an InGaAs light sensing layer. An insulating protection film of SixNy or SiOx with openings is selectively deposited on the epitaxial wafer. Compound semiconductor undercoats of a compound semiconductor with a narrower band gap than InP are grown on the InP window layers at the openings by utilizing the protection film as a mask. A p-type impurity from a solid source or a gas source is diffused through the undercoats and the epitaxial InP layer into the InGaAs sensing layer. Then, either p-electrodes are formed on the undercoats and the undercoats are etched by utilizing the p-electrodes as a mask, or the undercoats are shaped by selective etching in a form of p-electrodes and the p-electrodes are formed on the undercoats.

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