Method of making compound semiconductor light emitting device ha

Details Method of making compound semiconductor light emitting device ha Method of making compound semiconductor light emitting device ha

1997-10-14

1999-02-02

Brown, Peter Toby

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438681, 148DIG95, 372 45, 372 46, 372 50, H01L 2100

Patent

active

058664408

ABSTRACT:
After the active layer including indium is formed, the evaporation preventing layer is formed at a temperature which does not cause liberation of indium. The p-type Al.sub.X Ga.sub.1-X N (0.ltoreq.X.ltoreq.1) or the like is used for the evaporation preventing layer. Increasing the substrate temperature to as high as 1020.degree. C. for forming the upper cladding layer does not cause liberation of indium from the active layer because the evaporation preventing layer is provided. As a result, the composition ratio of indium can be easily controlled and the high-quality active layer and the high-quality interface between the active layer and the upper cladding layer can be provided.

REFERENCES:
patent: 4728628 (1988-03-01), Fiddyment et al.
patent: 5173751 (1992-12-01), Ota
patent: 5495115 (1996-02-01), Kudo et al.
patent: 5557115 (1996-09-01), Shakuda
patent: 5583878 (1996-12-01), Shimizu et al.
patent: 5583879 (1996-12-01), Yamazaki et al.
patent: 5592501 (1997-01-01), Edmond et al.
patent: 5656832 (1997-08-01), Ohba et al.
patent: 5693963 (1997-12-01), Fujimoto et al.
patent: 5727015 (1998-03-01), Takahashi et al.
patent: 5751013 (1998-05-01), Kidoguchi et al.
patent: 5753939 (1998-05-01), Sassa et al.
patent: 5780876 (1998-07-01), Hata
Nakamura et al., "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes" Appl. Physics Letters (28 Mar. 1994) 64(13):1687-1689.

Affiliated with

Also associated with

Rating

Method of making compound semiconductor light emitting device ha does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making compound semiconductor light emitting device ha, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making compound semiconductor light emitting device ha will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1116819