Method of making compound semiconductor device having a reduced

Details Method of making compound semiconductor device having a reduced Method of making compound semiconductor device having a reduced

1997-03-20

1999-01-05

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438172, 438505, H01L 2120

Patent

active

058562095

ABSTRACT:
A method for fabricating a semiconductor device includes a step of depositing a first compound semiconductor layer by a MOVPE process to have a first conductivity type, doping a surface of the first compound semiconductor layer to the same, first conductivity type, by implementing a planar doping process as a result of decomposition of a gaseous dopant, such that no substantial growth of the first compound semiconductor layer occurs during the planar doping process, and depositing a second compound semiconductor layer of the first conductivity type on the doped surface of the first compound semiconductor layer by a MOVPE process.

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Sueiro, H. et al., "Highly Doped InGaP/InGaAs/GaAs . . . ," IEEE Transactions on Electrons Devices, vol. 41, No. 10, 1994, pp. 1743-1746.

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