Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1996-09-24
1998-08-25
Niebling, John
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
H01G 915
Patent
active
057979715
ABSTRACT:
This invention relates to a composite electrode material for use in high rgy and high power density electrochemical capacitors, and to the electrochemical capacitor containing the electrodes. The electrodes are comprised of materials with high specific capacitance and electronic conductivity/high porosity. Specifically, the electrode is comprised of RuO.sub.2.xH.sub.2 O powder and carbon black or carbon fiber.
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Jow T. Richard
Zheng Jian-Ping
Bilodeau Thomas G.
Niebling John
O'Meara John M.
The United States of America as represented by the Secretary of
Zelenka Michael
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