Method of making complete dielectric isolation structure in semi

Details Method of making complete dielectric isolation structure in semi Method of making complete dielectric isolation structure in semi

1990-10-15

1992-01-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 61, 437 67, 437 72, 437 73, H01L 21302

Patent

active

050844083

ABSTRACT:
For controlling unwanted production of crystal defects from corners of isolated regions in a complete dielectric isolation structure, after at least one trench or groove is provided through a mask of an insulating film in a semiconductor substrate adhered to an insulating film of a base substrate, the mask is side-etched and the insulating film of the base substrate is selectively etched at the same time to expose corners of the semiconductor substrate. The exposed corners of the semiconductor substrate is then subjected to isotropic etching to remove a pointed portion therefrom. Thereafter, side surfaces of the semiconductor substrate exposed within the trench is oxidized to provide an insulating film for dielectric isolation which has rounded corners.

REFERENCES:
patent: 3343255 (1967-09-01), Donovan
patent: 3391023 (1968-07-01), Frescura
patent: 4017341 (1977-04-01), Suzuki
patent: 4645564 (1987-02-01), Morie et al.
patent: 4845048 (1989-07-01), Tamaki
patent: 4916086 (1990-04-01), Takahashi
patent: 4985745 (1991-01-01), Kitahara

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