Method of making complementary GaAs heterojunction transistors

Details Method of making complementary GaAs heterojunction transistors Method of making complementary GaAs heterojunction transistors

1986-10-30

1988-05-24

Roy, Upendra

Fishing, trapping, and vermin destroying

357 42, 437 22, 437 34, 437132, 437133, H01L 21263, H01L 2126, H01L 21203

Patent

active

047466278

ABSTRACT:
A complementary GaAs Transistor pair is formed of a p-type MODFET and an n-type FET having an ion-implanted channel doping with a heterojunction gate. One set of structures is implemented in a planar process utilizing molecular beam epitaxy. The p-MODFET threshold voltage is determined by the thickness and doping of the p-AlGaAs layer plus the Schottky barrier height of the metal gate, and the ion implantation dosage is adjusted to give the proper threshold voltage for the enhancement mode n-channel heterojunction FET.

REFERENCES:
patent: 4452646 (1984-06-01), Zuleeg
patent: 4523961 (1985-06-01), Hartman et al.
patent: 4568957 (1986-02-01), Zuleeg et al.
patent: 4603469 (1986-08-01), Armiento et al.
patent: 4635343 (1987-01-01), Kuroda
patent: 4662058 (1987-05-01), Crillo, Jr. et al.
Drummond et al., Thin Solid Films 123 (1985) 213.
Kiehl et al., IEEE-Electron Device Letts. EDL-5 (1984) 521.
Solomon et al., IEEE-Electron Device Letts. EDL-5 (1984) 379.

Affiliated with

Also associated with

Rating

Method of making complementary GaAs heterojunction transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making complementary GaAs heterojunction transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making complementary GaAs heterojunction transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1058337