Fishing – trapping – and vermin destroying
Patent
1994-11-09
1996-07-30
Fourson, George
Fishing, trapping, and vermin destroying
437 59, 437 61, 437162, 437186, 437193, 437233, 257370, 257378, 257511, H01L 21265
Patent
active
055411207
ABSTRACT:
Bipolar transistors and MOS transistors on a single semiconductor substrate involves depositing a single layer of polysilicon on a substrate, including complementary transistors of either or both types, and a method for fabricating same. The devices are made by depositing a single layer of polysilicon on a substrate and etching narrow slots in the form of rings around every bipolar emitter area, which slots are thereafter filler with an insulating oxide. Then, emitters and extrinsic base regions are formed. The emitters are self-aligned to the extrinsic base regions. An optical cladding procedure produces a surface layer of a silicide compound, a low resistance conductor. The resulting structure yields a high-performance device in which the size constraints are at a minimum and contact regions may be made at the top surface of the device.
REFERENCES:
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patent: 5008210 (1991-04-01), Chiang et al.
patent: 5409845 (1995-04-01), Robinson et al.
patent: 5444285 (1995-08-01), Robinson et al.
Krieger William A.
Martinez Andre M.
McDevitt Marion R.
Robinson Derek W.
Analog Devices Inc.
Fourson George
Pham Long
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