Method of making collector-up bipolar transistor having improved

Details Method of making collector-up bipolar transistor having improved Method of making collector-up bipolar transistor having improved

1995-06-07

1996-04-30

Fourson, George

Fishing, trapping, and vermin destroying

437126, 437133, 437187, 437228, 148DIG10, 148DIG11, 148DIG72, 257197, 257200, 257593, H01L 21265

Patent

active

055124968

ABSTRACT:
A collector-up bipolar transistor having an undercut region (522) beneath extrinsic regions of a base layer (510) and an emitter layer (508). The extrinsic emitter region is depleted of charge carriers and provides passivation for the extrinsic portion of the base layer (508). Contact to the emitter layer may be made by forming contacts on the top surface of the substrate (500) or in a recess in the backside of the substrate.

REFERENCES:
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patent: 5171697 (1992-12-01), Liu et al.
patent: 5202752 (1993-04-01), Honjo
patent: 5208184 (1993-05-01), Bayraktaroglu
patent: 5242843 (1993-09-01), Aina
patent: 5298438 (1994-03-01), Hill
patent: 5434091 (1995-07-01), Hill et al.
patent: 5445976 (1995-08-01), Henderson et al.

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