Method of making CMOS semiconductor device using specially posit

Details Method of making CMOS semiconductor device using specially posit Method of making CMOS semiconductor device using specially posit

1983-09-08

1985-10-29

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148187, 357 42, 357 91, H01L 21265, H01L 2122, H01L 2978

Patent

active

045493405

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device which includes MOSFETs of the two-channel conductivity types of P- and N-channel types on a single semiconductor substrate. According to the present invention, a first mask and a second mask are used. The first mask covers that surface part of the semiconductor substrate in which the P-channel type MOSFET is to be formed, and it serves as a mask when an N-type impurity is introduced into the semiconductor substrate. The first mask has a property and etching rate different from those of a film formed by the thermal oxidation of the semiconductor substrate surface. The second mask covers that surface part of the semiconductor substrate which has been formed with the N-channel type MOSFET, and it serves as a mask when a P-type impurity is introduced into the semiconductor substrate. The second mask is used as an inter-layer insulator film.

REFERENCES:
patent: 4361949 (1982-12-01), Hori et al.
patent: 4382827 (1983-05-01), Romano-Moran et al.
patent: 4385947 (1983-03-01), Halfacre et al.
patent: 4391650 (1983-07-01), Pfeifer et al.
patent: 4409726 (1983-10-01), Shiota
patent: 4420344 (1983-12-01), Davies et al.
patent: 4420872 (1983-12-01), Zaldivar
patent: 4434543 (1984-03-01), Schwabe et al.
patent: 4435895 (1984-03-01), Parrillo et al.
patent: 4435896 (1984-03-01), Parrillo et al.
patent: 4459741 (1984-07-01), Schwabe et al.
Parrillo et al., IEEE-TEDM Tech. Digest, 1980, pp. 752-755.
Sakai et al., Jap. Jour. Appl. Phys., vol. 18, (1979), Suppl. 18-1, p. 73.
Ong, D., IEEE-Trans. Electron Device, ED-28, (1981), 6.

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