Method of making CMOS integrated devices in seeded islands

Details Method of making CMOS integrated devices in seeded islands Method of making CMOS integrated devices in seeded islands

1988-09-21

1991-03-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 56, 437 57, 437 62, 437 83, 437173, 437907, 148DIG48, 148DIG91, H01L 21477

Patent

active

049977806

ABSTRACT:
The structure of a pair of concentrically disposed field effect transistors responsive to a common gate electrode, and a process for the fabrication thereof. In one form, a dielectric region is surrounded by an active region of monocrystalline silicon and has situated upon the dielectric region a layer of recrystallized silicon as a second active region. A gate electrode overlies both active regions and serves as a mask to form in such respective regions self-aligned channels. The concentric placement of the active substrate monocrystalline silicon region, and inner perimeter of dielectric, and a further inner active region of recrystallized silicon situated over a dielectric region, facilitates recrystallization from seed of monocrystalline silicon irrespective of the direction of translation taken by the energy beam, and associated melt, in scanning across the structure. The operational characteristics of the field effect transistor formed from recrystallized silicon are suitable for and readily interconnected as an element of a inverter/buffer, with the field effect transistor formed in the surrounding substrate active region.

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