Method of making CMOS image sensor-hybrid silicide

Details Method of making CMOS image sensor-hybrid silicide Method of making CMOS image sensor-hybrid silicide

2011-04-26

2011-04-26

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S057000, C438S060000, C257SE21165

Reexamination Certificate

active

07932127

ABSTRACT:
Techniques for manufacturing a CMOS image sensor are provided. A semiconductor substrate is provided, and at least one isolation region can be formed between a periphery region of the substrate and a photo-sensing region of the substrate. A first well in the periphery region and a second well in the photo-sensing region of the substrate are formed. A third well associated with a photodiode is also formed. A gate oxide layer, polysilicon layer, and first metal layer are respectively deposited. The polysilicon layer and first metal layer are etched to form an least one gate in the photo-sensing region and at least one gate in the periphery region. At least two doped regions in the first well are formed, as well as a doped region in the second well. A silicide block layer is deposited over the photo-sensing region of the substrate. A second metal layer is deposited at least over the periphery region after deposition of the silicide block. The substrate is exposed to a thermal environment to form silicide. The second metal layer is removed by etching.

REFERENCES:
patent: 5863820 (1999-01-01), Huang
patent: 6023081 (2000-02-01), Drowley et al.
patent: 6040593 (2000-03-01), Park
patent: 6137127 (2000-10-01), Merrill
patent: 6184115 (2001-02-01), Kou et al.
patent: 6194258 (2001-02-01), Wuu
patent: 6479873 (2002-11-01), Yoshiyama et al.
patent: 6908839 (2005-06-01), Rhodes
patent: 7700399 (2010-04-01), Yang et al.
patent: 2003/0197228 (2003-10-01), Okuda et al.
Notice of Allowance for U.S. Appl. No. 11/258,973, mailed on Nov. 4, 2009, 7 pages.
Final Office Action for U.S. Appl. No. 11/258,973, mailed on Jul. 2, 2009, 9 pages.
Non-Final Office Action for U.S. Appl. No. 11/258,973, mailed on Mar. 6, 2009, 14 pages.
Final Office Action for U.S. Appl. No. 11/258,973, mailed on Oct. 27, 2008, 12 pages.
Non-Final Office Action for U.S. Appl. No. 11/258,973, mailed on May 12, 2008, 11 pages.
Requirement for Restriction/Election for U.S. Appl. No. 11/258,973 mailed on Mar. 13, 2008, 6 pages.

Affiliated with

Also associated with

Rating

Method of making CMOS image sensor-hybrid silicide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making CMOS image sensor-hybrid silicide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making CMOS image sensor-hybrid silicide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2630542