Method of making closely spaced contacts to PN-junction using st

Details Method of making closely spaced contacts to PN-junction using st Method of making closely spaced contacts to PN-junction using st

1985-03-15

1986-02-25

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29591, 148 15, 148175, 148187, 148DIG10, 357 34, 357 91, H01L 21225, H01L 21265, H01L 21308

Patent

active

045718172

ABSTRACT:
A means and method is described for forming closely spaced contacts to adjacent semiconductor regions, such as the base and emitter of a bipolar transistor, so that the lateral voltage drops between the contacts and an intervening junction are minimized. The emitter and base and the contacts thereto are self-aligned. This is accomplished by a structure utilizing two poly-layers separated by one or more intermediate dielectric layers. The upper of the two poly-layers serves as a selective etching mask for defining the contact geometry and separation. The lower of the two poly-layers has one portion which becomes a poly-contact and diffusion source for the base region and a second portion which becomes a poly-contact and diffusion source for the emitter region. A single mask is used in connection with ion bombardment to alter the etch rate of portions of the poly-layers. This mask together with subsequent etch steps, defines the emitter width and location and the base-emitter contact separation. The process is self-aligning.

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Jambotkar, C. G., IBM-TDB, 24 (1981) 1305.
Ning et al., IBM-TDB, 22 (1979) 2123.
Chang et al., IBM-TDB, 21 (1978) 578.

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