Method of making cleaved-coupled-cavity (C.sup.3) diode lasers

Details Method of making cleaved-coupled-cavity (C.sup.3) diode lasers Method of making cleaved-coupled-cavity (C.sup.3) diode lasers

1986-01-31

1987-04-28

Hearn, Brian E.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29581, 29583, 29580, 148DIG28, 148DIG95, 372 36, 156645, 156629, 357 19, 357 17, 357 81, H01L 21304, H01L 2334

Patent

active

046602755

ABSTRACT:
A method of making an optically coupled semiconductor laser having cleaved facing end walls and precise alignment and spacing. An indium coated face of a semiconductor laser diode bar is placed on an indium coated support. A knife edge cleaves the bar into two closely spaced and aligned semiconductor diode laser bodies and concurrently cold bonds them to the support. The knife edge is used without deleteriously affecting their bonding to the support.

REFERENCES:
patent: 3351698 (1967-11-01), Marinace
patent: 4350990 (1982-09-01), Lo
W. T. Tsang, N. A. Olsson, and R. A. Logan, "High-Speed Direct Single-Frequency Modulation with Large Tuning Rate and Frequency Excursion in Cleaved-Coupled-Cavity Semiconductor Lasers", Applied Physics Letters, v. 42, n. 8, pp. 650-652, (Apr. 15, 1983).
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S. Kobayashi, Y. Yamamoto, M. Ito, and T. Kimura, "Direct Frequency Modulation in AlGaAs Semiconductor Lasers," IEEE Journal of Quantum Electronics, v QE-18, n. 4, pp. 582-595, (Apr. 1982).
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