Method of making charge coupled device image sensor

Details Method of making charge coupled device image sensor Method of making charge coupled device image sensor

1994-02-10

1994-12-06

Thomas, Tom

Fishing, trapping, and vermin destroying

437 28, 437149, H01L 2172, H01L 21339

Patent

active

053710339

ABSTRACT:
A CCD image sensor comprising: a semiconductor substrate of a first conductivity type connected to a ground; an impurity region of a second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type, to serve as a blooming prevention layer; an impurity region of the first conductivity type formed in the surface of the semiconductor substrate, so that it encloses the impurity region of the second conductivity type serving as a blooming prevention layer, to serve as a potential barrier layer; an impurity region of the second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type so that it encloses the impurity region of the first conductivity type serving as a potential barrier layer, to serve as a light receiving region; an insulation film which is formed on the surface of the semiconductor substrate of the first conductivity type and has contact holes at both edges of the impurity region of the second conductivity type, serving as a blooming prevention layer; silicide films filled in the contact holes; and a light shield conductor film which is formed on the surface of the remaining insulation film, except for a portion between the silicide films and the surfaces of the silicide films, and is connected to a voltage source.

REFERENCES:
patent: 4831426 (1989-05-01), Kimata et al.
patent: 4982252 (1991-01-01), Matsunaga
patent: 5118631 (1992-06-01), Dyck et al.
patent: 5238864 (1993-08-01), Maegawa et al.
patent: 5288656 (1994-02-01), Kusaka et al.

Affiliated with

Also associated with

Rating

Method of making charge coupled device image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making charge coupled device image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making charge coupled device image sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-214084