Method of making CCD-type solid-state pickup device

Details Method of making CCD-type solid-state pickup device Method of making CCD-type solid-state pickup device

1998-04-13

2000-07-18

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438144, H01L 21339

Patent

active

060906405

ABSTRACT:
A first silicon oxide film, silicon nitride film, and polycrystalline silicon film are formed on the entire surface of a semiconductor substrate. Then, the polycrystalline silicon film is etched to form a first transfer electrode and then, the surface of the first transfer electrode isothermally oxidized to form a second silicon oxide film. Thereafter, a polycrystalline silicon film and a third silicon oxide film are formed on the entire surface and patterned to form a second transfer electrode. A fourth silicon oxide film is formed on the entire surface, and is etched back. Thereafter, the side wall surfaces of the third silicon oxide film and the second transfer electrode are covered with a fourth silicon oxide film. Thereafter, a light shielding film is selectively formed on them.

REFERENCES:
patent: 4851890 (1989-07-01), Miyatake
patent: 5288656 (1994-02-01), Kusaka et al.
patent: 5514887 (1996-05-01), Hokari

Affiliated with

Also associated with

Rating

Method of making CCD-type solid-state pickup device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making CCD-type solid-state pickup device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making CCD-type solid-state pickup device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2035662