Method of making cBN semiconductor device having an ohmic electr

Details Method of making cBN semiconductor device having an ohmic electr Method of making cBN semiconductor device having an ohmic electr

1994-09-14

1995-08-22

Quach, T. N.

Fishing, trapping, and vermin destroying

437187, 437192, 437247, 148DIG113, H01L 21283

Patent

active

054440173

ABSTRACT:
An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.

REFERENCES:
patent: 3435398 (1969-03-01), Gielisse et al.
patent: 4875967 (1989-10-01), Mishima et al.
patent: 5057454 (1991-10-01), Yoshida et al.
patent: 5227318 (1993-07-01), Doll et al.
patent: 5240877 (1993-08-01), Yoshida et al.
patent: 5298461 (1994-03-01), Tomikawa et al.

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