Method of making cavities in a semiconductor wafer

Details Method of making cavities in a semiconductor wafer Method of making cavities in a semiconductor wafer

2006-01-17

2006-01-17

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S738000

Reexamination Certificate

active

06987051

ABSTRACT:
The invention provides a method of making a semiconductor structure that includes a surface layer of silicon, a buried insulating layer, and a substrate. The method includes implanting atoms through at least a portion of the insulating layer; and etching the insulating layer in at least a portion of the layer through which atoms have been implanted.

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