Method of making capacitor element used for solid...

Details Method of making capacitor element used for solid... Method of making capacitor element used for solid...

2006-12-05

2006-12-05

Ghyka, Alexander (Department: 2812)

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

C361S523000, C361S525000, C427S079000, C427S080000

Reexamination Certificate

active

07144432

ABSTRACT:
A method of making a capacitor element used for a solid electrolyte capacitor is provided. The method includes steps of forming a dielectric layer, a solid electrolyte layer of manganese dioxide, a graphite layer and a metal layer in this order on an anode chip of valve metal. The method further includes a step of forming an intermediate layer between the electrolyte layer and the graphite layer. The intermediate layer is made by application of manganese nitrate solution containing 0.5–2.0 wt % of graphite powder or by application of a graphite material containing manganese dioxide powder.

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patent: 5938798 (1999-08-01), Hanawa et al.
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patent: 7-22288 (1995-01-01), None
patent: 7-282802 (1995-10-01), None

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