Method of making buried channel charge coupled device with means

Details Method of making buried channel charge coupled device with means Method of making buried channel charge coupled device with means

1981-08-27

1982-12-07

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 148187, 357 24, 357 91, H01L 2710, H01L 21263

Patent

active

043625754

ABSTRACT:
The preferred embodiment of a method of making a buried channel CCD starts with a body of P type semiconductor material over which an oxide layer and a photoresist are deposited. Openings are formed to expose regions of the body surface where drains are to be formed and N type impurity atoms are implanted through the openings. The openings are then enlarged to expose an additional area of the surface surrounding the drains and P type atoms are implanted through the enlarged openings to form channel stops. Afterward, the surface of the body is exposed and N type atoms are implanted to form buried channel regions on each side of the channel stops and to convert a thin layer of the channel stops to lightly doped compensation regions extending between the drains and the buried channel regions.

REFERENCES:
patent: 3863065 (1975-01-01), Kosonocky et al.
patent: 3896474 (1975-07-01), Amelio et al.
patent: 3927468 (1975-12-01), Anthony et al.
patent: 3930893 (1976-01-01), Tchon
patent: 4028716 (1977-06-01), van Santen et al.
patent: 4076557 (1978-02-01), Huang et al.
patent: 4108686 (1978-08-01), Jacobus, Jr.
patent: 4152715 (1979-05-01), Wang
patent: 4173064 (1979-11-01), Farnow
patent: 4197630 (1980-04-01), Kamprath
patent: 4212683 (1980-07-01), Jones et al.
patent: 4280855 (1981-07-01), Bertin et al.

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