Fishing – trapping – and vermin destroying
Patent
1988-02-19
1990-08-28
Hearn, Brian E.
Fishing, trapping, and vermin destroying
148DIG3, 148DIG25, 148DIG41, 148DIG56, 148DIG154, 156612, 437 82, 437108, 437132, 437247, 437912, 437111, 437939, 437973, H01L 21203, H01L 2120, H01L 21324
Patent
active
049525271
ABSTRACT:
A new III-IV buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300.degree. C. The new material is crystalline, highly resistive, optically inactive, and can be overgrown with high quality III-V active layers.
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Calawa Arthur R.
Chen Chang-Lee
Manfra Michael J.
Smith Frank W.
Bunch William
Hearn Brian E.
Massachusetts Institute of Technology
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