Method of making bipolar transistor having amorphous silicon con

Details Method of making bipolar transistor having amorphous silicon con Method of making bipolar transistor having amorphous silicon con

1994-10-03

1997-09-23

Niebling, John

Fishing, trapping, and vermin destroying

437141, 437160, 437174, 148DIG10, 148DIG11, 257511, 257525, 257569, H01L 21265

Patent

active

056703945

ABSTRACT:
The present invention teaches a method for fabricating a bipolar junction transistor ("BJT") from a semiconductor substrate having a base region, wherein the BJT comprises an increased Early voltage. The method initially comprises the step of forming a patterned interlevel dielectric layer superjacent the substrate such that a segment of the substrate is exposed. Subsequently, a contact comprising a material having a grain size smaller than polycrystalline silicon is formed superjacent the patterned interlevel dielectric layer and the segment of the substrate exposed. The contact is then implanted with a dopant. Once implanted, the substrate is annealed to enable the dopant to diffuse from the contact into the base region impeded by the grain size to form an emitter region and thereby increase the Early voltage of the bipolar junction transistor.

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