Method of making BiCMOS circuit

Details Method of making BiCMOS circuit Method of making BiCMOS circuit

1996-06-25

1997-11-25

Niebling, John

Fishing, trapping, and vermin destroying

437 34, 437 57, 437 58, 437 59, 148DIG9, 257274, 257370, 257378, H01L 2170

Patent

active

056912242

ABSTRACT:
A method of manufacturing an integrated circuit having a buried layer of a low doped type of conductivity (2) and a buried layer of a highly doped type of the same conductivity (3) by masking a substrate (1) so as to define open areas on the substrate where it is desired to provide the two buried layers and doping the open areas of the substrate with a low concentration of dopants to form the low doped type of buried layer (2) is formed. Then one open area where the low doped type of buried layer (2) is formed is masked and the other open area is doped with a high concentration of dopants to form the highly doped type of buried layer (3).

REFERENCES:
patent: 5245209 (1993-09-01), Ishigaki
patent: 5406106 (1995-04-01), Hirai et al.

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