Method of making BI-CMOS integrated circuit having a polysilicon

Details Method of making BI-CMOS integrated circuit having a polysilicon Method of making BI-CMOS integrated circuit having a polysilicon

1994-10-25

1996-05-14

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

148DIG9, 148DIG124, H01L 218249

Patent

active

055167187

ABSTRACT:
The invention concerns a BI-CMOS process, in which Field-Effect Transistors (FETs) and Bipolar Junction Transistors (BJTs) are manufactured on a common substrate. In several processing steps, FET structures are formed simultaneously with BJT structures. For example, in one step, polysilicon gate electrodes for the FETs and polysilicon emitters for the BJTs are formed simultaneously. In another aspect of the invention, a polysilicon layer is used to reduce channeling which would otherwise occur during an implant step.

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