Fishing – trapping – and vermin destroying
Patent
1996-05-20
1997-03-11
Niebling, John
Fishing, trapping, and vermin destroying
437 60, 437918, 437 41, H01L 2184
Patent
active
056100833
ABSTRACT:
A process for creating a back gate contact, in an SOI layer, that can easily be incorporated into a MOSFET fabrication recipe, has been developed. The back gate contact consists of a etched trench, lined with insulator, and filled with doped polysilicon. The polysilicon filled trench electrically connects the semiconductor substrate to overlying metal contacts.
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patent: 5294821 (1994-03-01), Iwamatsu
patent: 5414288 (1995-05-01), Fitch et al.
patent: 5573961 (1996-11-01), Hsu et al.
Chan Lap
Sundaresan Ravis H.
Wei Che-Chia
Booth Richard A.
Chartered Semiconductor Manufacturing PTE LTD
Niebling John
Saile George O.
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