Method of making avalanche photodiodes with epitaxially-regrown

Details Method of making avalanche photodiodes with epitaxially-regrown Method of making avalanche photodiodes with epitaxially-regrown

1997-03-06

1998-12-01

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

H01L 3118

Patent

active

058438041

ABSTRACT:
A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a multi-layer semiconductor platform having a conductivity opposite to the conductivity type of the cap layer, including a light absorption layer, a substrate and an intermediate layer. A second embodiment of the present invention is disclosed including a SAM avalanche photodiode having a guard ring with a variable distribution of impurity dopant concentrations. In addition, a third embodiment of the present invention is disclosed in which a narrow band gap layer completely covers the cap layer and a non-alloy metal contact is formed to completely cover the narrow band gap layer, forming a mirror junction. In this embodiment, incident light is shined through the substrate and reflected from the mirror junction, enhancing the absorption efficiency.

REFERENCES:
patent: 4651187 (1987-03-01), Sugimoto et al.
patent: 4840916 (1989-06-01), Yasuda et al.
patent: 5075750 (1991-12-01), Kagawa
patent: 5157473 (1992-10-01), Okazaki
patent: 5308995 (1994-05-01), Tsuji et al.
patent: 5343055 (1994-08-01), Davis et al.

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