Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-07-13
1983-09-13
Andrews, M. J.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29576T, 29578, 29591, 148 15, 357 30, H01L 2176, H01L 2714, H01L 21363
Patent
active
044033974
ABSTRACT:
A quadrant avalanche photodiode with large surface areas is made using photolithographic planar technology. The use of proton bombardment creates semi-insulating material around the quadrants. Semi-insulating material prevents cross-talk between quadrants.
The Schottky barrier quadrant detectors were fabricated using GaAs.sub.1-x Sb.sub.x ternary alloys grown epitaxially on heavily doped GaAs substrates.
REFERENCES:
patent: 3463925 (1969-08-01), Walker et al.
patent: 3534231 (1970-10-01), Biard
patent: 3586542 (1971-06-01), Mac Rae
patent: 3824133 (1974-07-01), D'asaro et al.
patent: 3873428 (1975-03-01), Winters
patent: 4025404 (1977-05-01), Joly et al.
patent: 4069095 (1978-01-01), Lorenze, Jr. et al.
patent: 4076599 (1978-02-01), Caricchio, Jr. et al.
patent: 4115150 (1978-09-01), Dyment
patent: 4144540 (1979-03-01), Bottka
patent: 4157926 (1979-06-01), Schoolar
patent: 4162203 (1979-07-01), Eden et al.
patent: 4218143 (1980-08-01), Bottka
Foyt, A. G. et al., "Isolation of Junction Devices in GaAs using Proton Bardment", in Solid State Electronics, vol. 12, pp. 209-214, 1969.
Scholl, F. W. et al., GaAs.sub.1-x Sb.sub.x 1.06 .mu.m Avalanche Photodiodes", in Conference International Electron Devices Meeting (Technical Digest), Wash., D.C., 1976.
Munoz, E. et al., "Avalanche Photodetectors for Optical Digital Communications", in Conference 23rd International Congress on Electronics, Rome, Italy, 3-1976, pp. 144-150.
Colclaser, R. A. Microelectronics: Processing and Device Design, John Wiley and Sons, Inc., New York, 1980.
Bottka Nicholas
Hills Marian E.
Andrews M. J.
Beers R. F.
Pritchard Kenneth G.
Schiavelli Alan E.
Skeer W. Thom
LandOfFree
Method of making avalanche photodiodes does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making avalanche photodiodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making avalanche photodiodes will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1724079