Fishing – trapping – and vermin destroying
Patent
1989-05-12
1989-10-24
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 3, 437 74, 437 75, 357 13, 357 16, 357 29, 357 30, 148DIG70, H01L 2176
Patent
active
048762091
ABSTRACT:
The disclosed invention as directed to a semiconductor material avalanche photodiode of a separate multiplication and absorption region heterostructure design (SAM-APD). The improved SAM-APD of this invention is characterized by a plurality of floating guard rings which are separated about a central region and doped in the opposite high concentration from that of the multiplication region in which they are positioned. These rings float in the sense that they have no contact with the metalized p-contact of the photodiode; and, therefore, no direct contact with the current source. This structure results in an enhanced avalanche effect in the central region with limited edge breakdown undesirable consequences. In addition to this structure, an alternative embodiment suggest the use of both a floating ring and thin slab below the central region, of a dimension slightly smaller than the smaller region and concentric with it to achieve an optimized central avalanche breakdown with reducd edge breakdown of the electric fields formed during reversed biasing of the APD (avalanche photodiode).
REFERENCES:
patent: 4212019 (1980-07-01), Watage
patent: 4396443 (1983-08-01), Lewerenz
patent: 4455351 (1984-06-01), Camblibel
patent: 4586067 (1986-04-01), Webb
patent: 4587544 (1986-05-01), Webb
patent: 4597004 (1986-06-01), Lougeway
patent: 4631566 (1986-12-01), Campbell
patent: 4651187 (1987-03-01), Sugimoto
patent: 4656494 (1987-04-01), Kobayashi
patent: 4684969 (1987-08-01), Taguchi
patent: 4700209 (1987-10-01), Webb
patent: 4701773 (1987-10-01), Kanada
patent: 4729004 (1988-03-01), Sakai
patent: 4731641 (1988-03-01), Matsushima
patent: 4755860 (1988-07-01), Allan
patent: 4761383 (1988-08-01), Matsushima
patent: 4790819 (1988-04-01), Ouchi
patent: 4816890 (1989-03-01), Ouchi
"Laser Lights the Way", Electronics, Feb. 24, 1986, pp. 19-20.
Stillman, G. E., Wolfe, C. M., Rossi, J. A., Ryan, J. L., "GaAs Electro Absorption Avalanche Photodiode Detectors", Inst. Phys. Conf. Ser. No. 24, 1973 Chapter 4, pp. 210-222.
Law, H. D., Tomasetta, L. R., Nakano, K., "Ion-Implanted in GaAs P Avalanche Photodiode," Appl. Phys. Lett. 33 (11), 1978.
Diadiuk, Y., Groves, S. H., Hurwitz, C. E., Iseler, G. W. "Low Dark-Current, High Gain GaInAs/InP Avalanche Photodetectors", IEEE J. of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981.
Susa, N., Nakagome, H., Ando, H., Kanbe, H. "Characteristics in InGaAs/InP Avalanche Photodiodes with Separated Absorption and Multiplication Regions", IEEE J. of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981.
Gutierrez Anthony
Hearn Brian E.
U.S.C.
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